$ 17.989

IXGR16N170AH1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247

Description:

IXYS SEMICONDUCTOR IXGR16N170AH1 IGBT Single Transistor, Isolated, 16A, 5V, 120W, 1.7kV, TO-247AD, 3Pins

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IXGR16N170AH1 Datasheet PDF (2 Pages)

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IXGR16N170AH1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247

Number of Positions

3 Position

Polarity

N-Channel

Power Dissipation

120 W

Rise Time

40.0 ns

Breakdown Voltage (Collector to Emitter)

1700 V

Reverse recovery time

150 ns

Input Power (Max)

120 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

120000 mW

IXGR16N170AH1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Bulk

Operating Temperature

-55℃ ~ 150℃ (TJ)

IXGR16N170AH1 Environmental

IXGR16N170AH1 Export Classifications

IXGR16N170AH1 Function Overview

IXGR16N170AH1 Documents

IXGR16N170AH1 Other Datasheet PDF

IXYS Semiconductor

2 Pages / 0.51 MByte

IXGR16N170 Documents

IXGR16N170AH1 Datasheet PDF

IXYS Semiconductor

IXYS SEMICONDUCTOR IXGR16N170AH1 IGBT Single Transistor, Isolated, 16A, 5V, 120W, 1.7kV, TO-247AD, 3Pins

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