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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGR40N60C2D1 Datasheet PDF
IXGR40N60C2D1
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$ 17.6
IXGR40N60C2D1 Datasheet PDF (6 Pages)
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IXGR40N60C2D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
ISOPLUS-247
Power Dissipation
170000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
25 ns
Input Power (Max)
170 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
170000 mW

IXGR40N60C2D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGR40N60C2D1 Documents

IXYS Semiconductor
6 Pages / 0.17 MByte
IXYS Semiconductor
6 Pages / 0.17 MByte

IXGR40N60C2 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR40N60C2 IGBT Single Transistor, Isolated, 56A, 2.7V, 170W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 56A 170000mW 3Pin(3+Tab) ISOPLUS 247
IXYS Semiconductor
Igbt 600V Isoplus247
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