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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGR60N60B2D1 Datasheet PDF
IXGR60N60B2D1
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IXGR60N60B2D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
250 W
Rise Time
100 ns
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
35 ns
Input Power (Max)
250 W
Operating Temperature (Max)
150 ℃

IXGR60N60B2D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGR60N60B2D1 Documents

IXYS Semiconductor
6 Pages / 0.6 MByte
IXYS Semiconductor
6 Pages / 0.49 MByte

IXGR60N60B2 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR60N60B2 IGBT Single Transistor, Isolated, 75A, 2V, 250W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR60N60B2D1 IGBT Single Transistor, Isolated, 75A, 2V, 250W, 600V, TO-247AD, 3Pins
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