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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGR60N60C3D1 Datasheet PDF
IXGR60N60C3D1
$ 9.296
IXGR60N60C3D1 Datasheet PDF (8 Pages)
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IXGR60N60C3D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
ISOPLUS-247
Power Dissipation
170000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
25 ns
Input Power (Max)
170 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
170000 mW

IXGR60N60C3D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGR60N60C3D1 Documents

IXYS Semiconductor
8 Pages / 0.2 MByte
IXYS Semiconductor
8 Pages / 0.31 MByte

IXGR60N60C3 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR60N60C3C1 IGBT Single Transistor, SIC, 75A, 2.5V, 170W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 170000mW 3Pin(3+Tab) ISOPLUS 247
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