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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGT30N120B3D1 Datasheet PDF
IXGT30N120B3D1
$ 7.648
IXGT30N120B3D1 Datasheet PDF (7 Pages)
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IXGT30N120B3D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Number of Positions
3 Position
Power Dissipation
300 W
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
100 ns
Input Power (Max)
300 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IXGT30N120B3D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.05 mm
Size-Width
14 mm
Size-Height
5.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGT30N120B3D1 Documents

IXYS Semiconductor
7 Pages / 0.21 MByte
IXYS Semiconductor
1 Pages / 0.01 MByte

IXGT30N120B3 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXGT30N120B3D1 IGBT Single Transistor, 50A, 2.96V, 300W, 1.2kV, TO-268, 3Pins New
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