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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGT60N60C3D1 Datasheet PDF
IXGT60N60C3D1
$ 7.124
IXGT60N60C3D1 Datasheet PDF (7 Pages)
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IXGT60N60C3D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
25 ns
Input Power (Max)
380 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
380000 mW

IXGT60N60C3D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGT60N60C3D1 Documents

IXYS Semiconductor
7 Pages / 0.23 MByte
IXYS Semiconductor
1 Pages / 0.6 MByte

IXGT60N60C3 Documents

IXYS Semiconductor
Igbt 600V 75A 380W To268
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