IXGT6N170 Datasheet PDF - IXYS Semiconductor

●This IXGT6N170 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 75000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.