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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGX120N60B Datasheet PDF
IXGX120N60B
$ 1.959
IXGX120N60B Datasheet PDF (5 Pages)
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IXGX120N60B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
600 V
Current Rating
200 A
Case/Package
TO-247-3
Rise Time
45.0 ns
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
660 W

IXGX120N60B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Size-Width
5.21 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGX120N60B Documents

IXYS Semiconductor
5 Pages / 0.46 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte

IXGX120N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 200A 780000mW 3Pin(3+Tab) PLUS 247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 280A 780000mW 3Pin(3+Tab) PLUS 247
IXYS Semiconductor
IGBT 600V 200A 660W TO247
IXYS Semiconductor
IGBT 600V 75A 830W PLUS TO-247
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