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IXKR25N80C
$ 0.016
IXKR25N80C Datasheet PDF (2 Pages)
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IXKR25N80C Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
ISOPLUS-247
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.15 Ω
Polarity
N-Channel
Power Dissipation
250 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
800 V
Continuous Drain Current (Ids)
25.0 A
Rise Time
15 ns
Isolation Voltage
2.50 kV
Fall Time
6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃

IXKR25N80C Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-40℃ ~ 150℃ (TJ)

IXKR25N80C Documents

IXYS Semiconductor
2 Pages / 0.09 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte

IXKR25N80 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXKR25N80C Power MOSFET, N Channel, 25A, 800V, 150mohm, 10V, 4V
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