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Part Datasheet Search > High Voltage MOS > IXYS Semiconductor > IXKR40N60C Datasheet PDF
IXKR40N60C
$ 2.071
IXKR40N60C Datasheet PDF (2 Pages)
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IXKR40N60C Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.07 Ω
Polarity
N-Channel
Power Dissipation
280 W
Threshold Voltage
3.9 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
38.0 A
Rise Time
30 ns
Isolation Voltage
2.50 kV
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃

IXKR40N60C Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-40℃ ~ 150℃ (TJ)

IXKR40N60C Documents

IXYS Semiconductor
2 Pages / 0.1 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
2 Pages / 0.04 MByte

IXKR40N60 Documents

IXYS Semiconductor
MOSFET N-CH 600V 38A ISOPLUS247
IXYS Semiconductor
IXYS SEMICONDUCTOR IXKR40N60C Power MOSFET, N Channel, 38A, 600V, 70mohm, 10V, 3.9V
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