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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXSH24N60AU1 Datasheet PDF
IXSH24N60AU1
$ 0.951
IXSH24N60AU1 Datasheet PDF (2 Pages)
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IXSH24N60AU1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
150 W
Power Dissipation
150000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
50 ns
Input Power (Max)
150 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150000 mW

IXSH24N60AU1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXSH24N60AU1 Documents

IXYS Semiconductor
2 Pages / 0.03 MByte
IXYS Semiconductor
3 Pages / 0.27 MByte
IXYS Semiconductor
18 Pages / 1.33 MByte

IXSH24N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
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