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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXSH24N60BD1 Datasheet PDF
IXSH24N60BD1
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IXSH24N60BD1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
25 ns
Input Power (Max)
150 W
Power Dissipation (Max)
150 W

IXSH24N60BD1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXSH24N60BD1 Documents

IXYS Semiconductor
2 Pages / 0.1 MByte
IXYS Semiconductor
3 Pages / 0.27 MByte

IXSH24N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
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