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IXTA130N10T
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IXTA130N10T Datasheet PDF (5 Pages)
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IXTA130N10T Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Dissipation
360 W
Drain to Source Voltage (Vds)
100 V
Rise Time
47 ns
Input Capacitance (Ciss)
5080pF @25V(Vds)
Fall Time
28 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
360W (Tc)

IXTA130N10T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Size-Height
4.5 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXTA130N10T Documents

IXYS Semiconductor
5 Pages / 0.14 MByte

IXTA130N10 Documents

IXYS Semiconductor
IXTA Series Single N-Channel 100V 9.1mOhm 360W Power Mosfet - TO-263
IXYS Semiconductor
MOSFET N-CH 100V 130A TO-263-7
IXYS Semiconductor
Mosfet n-Ch 100V 130A To263
Littelfuse
Power Field-Effect Transistor,
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