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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTA3N110 Datasheet PDF
IXTA3N110
$ 4.097

IXTA3N110 Datasheet PDF - IXYS Semiconductor

Manufacturer:
IXYS Semiconductor
Category:
MOSFETs
Case Package:
TO-263-3
Description:
D2PAK N-CH 1100V 3A
Pictures:
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Product Pictures
Documentation:
IXTA3N110 Datasheet (4 Pages)
IXTA3N110 Datasheet PDF (4 Pages)
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IXTA3N110 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
4 Ω
Polarity
N-CH
Power Dissipation
150 W
Drain to Source Voltage (Vds)
1100 V
Breakdown Voltage (Drain to Source)
1100 V
Continuous Drain Current (Ids)
3A
Rise Time
15 ns
Input Capacitance (Ciss)
1350pF @25V(Vds)
Fall Time
18 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
150W (Tc)
View Datasheet >

IXTA3N110 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
9.9 mm
Size-Width
9.2 mm
Size-Height
4.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

IXTA3N110 Documents

IXTA3N110 Datasheet
IXYS Semiconductor
4 Pages / 0.13 MByte
IXTA3N110 Other Datasheet PDF
IXYS Semiconductor
4 Pages / 0.13 MByte
IXTA3N110 Product Catalog
IXYS Semiconductor
4 Pages / 0.1 MByte

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