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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTA6N50D2 Datasheet PDF
IXTA6N50D2
$ 4.976
IXTA6N50D2 Datasheet PDF (5 Pages)
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IXTA6N50D2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
550 mΩ
Power Dissipation
300 W
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Rise Time
72 ns
Input Capacitance (Ciss)
2800pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
43 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXTA6N50D2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
9.65 mm
Size-Width
10.41 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTA6N50D2 Documents

IXYS Semiconductor
5 Pages / 0.18 MByte
IXYS Semiconductor
8 Pages / 0.16 MByte

IXTA6N50 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 6A 3Pin(2+Tab) D2PAK
IXYS Semiconductor
Trans MOSFET N-CH 500V 3Pin(2+Tab) TO-263AA
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