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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTH16P60P Datasheet PDF
IXTH16P60P
$ 8.27
IXTH16P60P Datasheet PDF (6 Pages)
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IXTH16P60P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
720 mΩ
Polarity
P-CH
Power Dissipation
460 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
16A
Rise Time
25 ns
Input Capacitance (Ciss)
5120pF @25V(Vds)
Fall Time
38 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
460W (Tc)

IXTH16P60P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTH16P60P Documents

IXYS Semiconductor
6 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXTH16P60 Documents

IXYS Semiconductor
TO-247P-CH 600V 16A
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