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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTH30N60L2 Datasheet PDF
IXTH30N60L2
$ 0.447
IXTH30N60L2 Datasheet PDF (5 Pages)
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IXTH30N60L2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
240 mΩ
Polarity
N-Channel
Power Dissipation
540 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
600 V
Rise Time
65 ns
Input Capacitance (Ciss)
10700pF @25V(Vds)
Fall Time
43 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
540W (Tc)

IXTH30N60L2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Width
5.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTH30N60L2 Documents

IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.13 MByte

IXTH30N60 Documents

IXYS Semiconductor
N-Channel 600V 30A 0.24Ω Through Hole PolarHV Power Mosfet - TO-247
IXYS Semiconductor
IXYS SEMICONDUCTOR IXTH30N60L2 Power MOSFET, LINEAR L2™, N Channel, 30A, 600V, 240mohm, 10V, 2.5V
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