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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTH96N20P Datasheet PDF
IXTH96N20P
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IXTH96N20P Datasheet PDF (5 Pages)
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IXTH96N20P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.024 Ω
Polarity
N-Channel
Power Dissipation
600 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
96.0 A
Rise Time
30 ns
Input Capacitance (Ciss)
4800pF @25V(Vds)
Fall Time
30 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
600W (Tc)

IXTH96N20P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXTH96N20P Documents

IXYS Semiconductor
5 Pages / 0.19 MByte
IXYS Semiconductor
1 Pages / 0.37 MByte

IXTH96N20 Documents

IXYS Semiconductor
Trans MOSFET N-CH 200V 96A 3Pin(3+Tab) TO-247
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