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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTM24N50 Datasheet PDF
IXTM24N50
$ 10.462
IXTM24N50 Datasheet PDF (4 Pages)
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IXTM24N50 Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-204
Number of Positions
2 Position
Drain to Source Resistance (on) (Rds)
0.23 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
24.0 A
Rise Time
33 ns
Input Capacitance (Ciss)
4200pF @25V(Vds)
Fall Time
30 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300000 mW

IXTM24N50 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
End of Life
Material
Silicon

IXTM24N50 Documents

IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
1 Pages / 0.12 MByte

IXTM24 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 24A 3Pin(2+Tab) TO-204AE
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