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IXTN102N65X2 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

SOT-227B N-CH 650V 76A

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Documentation:

IXTN102N65X2 Datasheet (5 Pages)

IXTN102N65X2 Datasheet PDF (5 Pages)

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IXTN102N65X2 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

4 Pin

Case/Package

SOT-227-4

Drain to Source Resistance (on) (Rds)

0.03 Ω

Polarity

N-Channel

Power Dissipation

595 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

650 V

Breakdown Voltage (Drain to Source)

650 V

Continuous Drain Current (Ids)

76A

Rise Time

28 ns

Input Capacitance (Ciss)

10900pF @25V(Vds)

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

595W (Tc)

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IXTN102N65X2 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Size-Length

38.23 mm

Size-Width

25.42 mm

Size-Height

9.6 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTN102N65X2 Environmental

IXTN102N65X2 Function Overview

IXTN102N65X2 Documents

IXTN102N65X2 Datasheet

IXYS Semiconductor

5 Pages / 0.12 MByte

IXTN102N65 Documents

IXTN102N65X2 Datasheet PDF

IXYS Semiconductor

SOT-227B N-CH 650V 76A

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