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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTN210P10T Datasheet PDF
IXTN210P10T
$ 41.437
IXTN210P10T Datasheet PDF (6 Pages)
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IXTN210P10T Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Polarity
P-CH
Power Dissipation
830W (Tc)
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
210A
Rise Time
98 ns
Input Capacitance (Ciss)
69500pF @25V(Vds)
Fall Time
55 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
830W (Tc)

IXTN210P10T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTN210P10T Documents

IXYS Semiconductor
6 Pages / 0.17 MByte

IXTN210P10 Documents

IXYS Semiconductor
SOT-227B P-CH 100V 210A
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