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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTP180N10T Datasheet PDF
IXTP180N10T
$ 1.272
IXTP180N10T Datasheet PDF (6 Pages)
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IXTP180N10T Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
6.4 mΩ
Polarity
N-Channel
Power Dissipation
480 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
180 A
Rise Time
54 ns
Input Capacitance (Ciss)
6900pF @25V(Vds)
Input Power (Max)
480 W
Fall Time
31 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
480W (Tc)

IXTP180N10T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.83 mm
Size-Height
9.15 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXTP180N10T Documents

IXYS Semiconductor
6 Pages / 0.15 MByte

IXTP180N10 Documents

IXYS Semiconductor
TO-220 N-CH 100V 180A
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