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IXTP182N055T Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220AB N-CH 55V 182A

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Documentation:

IXTP182N055T Datasheet (6 Pages)

IXTP182N055T Datasheet PDF (6 Pages)

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IXTP182N055T Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Drain to Source Resistance (on) (Rds)

5.00 mΩ

Polarity

N-Channel

Power Dissipation

360W (Tc)

Drain to Source Voltage (Vds)

55 V

Breakdown Voltage (Drain to Source)

55.0 V

Continuous Drain Current (Ids)

182 A

Input Capacitance (Ciss)

4850pF @25V(Vds)

Power Dissipation (Max)

360W (Tc)

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IXTP182N055T Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXTP182N055T Environmental

IXTP182N055T Function Overview

IXTP182N055T Documents

IXTP182N055T Datasheet

IXYS Semiconductor

6 Pages / 0.21 MByte

IXTP182N055T Other Datasheet PDF

IXYS Semiconductor

6 Pages / 0.21 MByte

IXTP182N055 Documents

IXTP182N055T Datasheet PDF

IXYS Semiconductor

TO-220AB N-CH 55V 182A

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