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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTP36N30P Datasheet PDF
IXTP36N30P
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IXTP36N30P Datasheet PDF (5 Pages)
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IXTP36N30P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.092 Ω
Polarity
N-CH
Power Dissipation
300 W
Threshold Voltage
5.5 V
Drain to Source Voltage (Vds)
300 V
Continuous Drain Current (Ids)
36A
Rise Time
30 ns
Input Capacitance (Ciss)
2250pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
28 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXTP36N30P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Size-Length
10.66 mm
Size-Width
4.83 mm
Size-Height
9.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTP36N30P Documents

IXYS Semiconductor
5 Pages / 0.24 MByte
IXYS Semiconductor
6 Pages / 0.28 MByte

IXTP36N30 Documents

IXYS Semiconductor
TO-220 N-CH 300V 36A
Littelfuse
Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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