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IXTP50N25T Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220AB N-CH 250V 50A

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Documentation:

IXTP50N25T Datasheet (6 Pages)

IXTP50N25T Datasheet PDF (6 Pages)

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IXTP50N25T Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

60 mΩ

Polarity

N-CH

Power Dissipation

400 W

Drain to Source Voltage (Vds)

250 V

Breakdown Voltage (Drain to Source)

250 V

Continuous Drain Current (Ids)

50A

Rise Time

25 ns

Input Capacitance (Ciss)

4000pF @25V(Vds)

Fall Time

25 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

400W (Tc)

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IXTP50N25T Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTP50N25T Environmental

IXTP50N25T Function Overview

IXTP50N25T Documents

IXTP50N25T Datasheet

IXYS Semiconductor

6 Pages / 0.22 MByte

IXTP50N25T Other Datasheet PDF

IXYS Semiconductor

6 Pages / 0.19 MByte

IXTP50N25 Documents

IXTP50N25T Datasheet PDF

IXYS Semiconductor

TO-220AB N-CH 250V 50A

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