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IXTP60N10T Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

Trans MOSFET N-CH 100V 60A 3Pin(3+Tab) TO-220AB

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Documentation:

IXTP60N10T Datasheet (5 Pages)

IXTP60N10T Datasheet PDF (5 Pages)

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IXTP60N10T Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Drain to Source Resistance (on) (Rds)

18.0 mΩ

Polarity

N-Channel

Power Dissipation

176 W

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Continuous Drain Current (Ids)

60.0 A

Rise Time

40 ns

Input Capacitance (Ciss)

2650pF @25V(Vds)

Input Power (Max)

176 W

Fall Time

37 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

176W (Tc)

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IXTP60N10T Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.66 mm

Size-Width

4.82 mm

Size-Height

9.15 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXTP60N10T Environmental

IXTP60N10T Function Overview

IXTP60N10T Documents

IXTP60N10T Datasheet

IXYS Semiconductor

5 Pages / 0.16 MByte

IXTP60N10 Documents

IXTP60N10T Datasheet PDF

IXYS Semiconductor

Trans MOSFET N-CH 100V 60A 3Pin(3+Tab) TO-220AB

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