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IXTP75N10P
$ 3.645
IXTP75N10P Datasheet PDF (5 Pages)
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IXTP75N10P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.025 Ω
Polarity
N-Channel
Power Dissipation
360 W
Threshold Voltage
5.5 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
75.0 A
Rise Time
53 ns
Input Capacitance (Ciss)
2250pF @25V(Vds)
Input Power (Max)
360 W
Fall Time
45 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
360000 mW

IXTP75N10P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Height
9.15 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXTP75N10P Documents

IXYS Semiconductor
5 Pages / 0.24 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte

IXTP75N10 Documents

IXYS Semiconductor
TO-220 N-CH 100V 75A
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