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IXTP8N50P
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IXTP8N50P Datasheet PDF (5 Pages)
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IXTP8N50P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
8.00 A
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
800 mΩ
Polarity
N-Channel
Power Dissipation
150 W
Threshold Voltage
5.5 V
Input Capacitance
1.05 nF
Gate Charge
20.0 nC
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
8.00 A
Rise Time
28 ns
Input Capacitance (Ciss)
1050pF @25V(Vds)
Fall Time
23 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
150W (Tc)

IXTP8N50P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.83 mm
Size-Height
16 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTP8N50P Documents

IXYS Semiconductor
5 Pages / 0.22 MByte

IXTP8N50 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 8A 3Pin(3+Tab) TO-220AB
IXYS Semiconductor
Trans MOSFET N-CH 500V 4A 3Pin(3+Tab) TO-220
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