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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTQ100N25P Datasheet PDF
IXTQ100N25P
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IXTQ100N25P Datasheet PDF (5 Pages)
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IXTQ100N25P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.027 Ω
Polarity
N-Channel
Power Dissipation
600 W
Threshold Voltage
5 V
Input Capacitance
6300 pF
Drain to Source Voltage (Vds)
250 V
Continuous Drain Current (Ids)
100 A
Rise Time
26 ns
Input Capacitance (Ciss)
6300pF @25V(Vds)
Input Power (Max)
600 W
Fall Time
28 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
600W (Tc)

IXTQ100N25P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTQ100N25P Documents

IXYS Semiconductor
5 Pages / 0.26 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte

IXTQ100N25 Documents

IXYS Semiconductor
Trans MOSFET N-CH 250V 100A 3Pin(3+Tab) TO-3P
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