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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTQ170N10P Datasheet PDF
IXTQ170N10P
$ 1.596
IXTQ170N10P Datasheet PDF (5 Pages)
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IXTQ170N10P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
9 mΩ
Polarity
N-Channel
Power Dissipation
714 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
170 A
Rise Time
50 ns
Reverse recovery time
120 ns
Input Capacitance (Ciss)
6000pF @25V(Vds)
Fall Time
33 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
715W (Tc)

IXTQ170N10P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.8 mm
Size-Width
4.9 mm
Size-Height
20.3 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXTQ170N10P Documents

IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
5 Pages / 0.2 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte

IXTQ170N10 Documents

IXYS Semiconductor
TO-3P N-CH 100V 170A
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