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IXTQ200N10T Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-3-3

Description:

TO-3P N-CH 100V 200A

Pictures:

3D Model

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Product Pictures

Documentation:

IXTQ200N10T Datasheet (5 Pages)

IXTQ200N10T Datasheet PDF (5 Pages)

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IXTQ200N10T Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-3-3

Polarity

N-CH

Power Dissipation

550W (Tc)

Drain to Source Voltage (Vds)

100 V

Continuous Drain Current (Ids)

200A

Input Capacitance (Ciss)

9400pF @25V(Vds)

Power Dissipation (Max)

550W (Tc)

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IXTQ200N10T Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXTQ200N10T Environmental

IXTQ200N10T Function Overview

IXTQ200N10T Documents

IXTQ200N10T Datasheet

IXYS Semiconductor

5 Pages / 0.17 MByte

IXTQ200N10T Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.16 MByte

IXTQ200N10 Documents

IXTQ200N10T Datasheet PDF

IXYS Semiconductor

TO-3P N-CH 100V 200A

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