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IXTQ36N30P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-3-3

Description:

TO-3P N-CH 300V 36A

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Documentation:

IXTQ36N30P Datasheet (5 Pages)

IXTQ36N30P Datasheet PDF (5 Pages)

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IXTQ36N30P Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-3-3

Polarity

N-CH

Power Dissipation

300 W

Drain to Source Voltage (Vds)

300 V

Continuous Drain Current (Ids)

36A

Rise Time

30 ns

Input Capacitance (Ciss)

2250pF @25V(Vds)

Input Power (Max)

300 W

Fall Time

28 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

300W (Tc)

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IXTQ36N30P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTQ36N30P Environmental

IXTQ36N30P Function Overview

IXTQ36N30P Documents

IXTQ36N30P Datasheet

IXYS Semiconductor

5 Pages / 0.24 MByte

IXTQ36N30P Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.24 MByte

IXTQ36N30 Documents

IXTQ36N30P Datasheet PDF

IXYS Semiconductor

TO-3P N-CH 300V 36A

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