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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTQ40N50L2 Datasheet PDF
IXTQ40N50L2
$ 13.375
IXTQ40N50L2 Datasheet PDF (5 Pages)
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IXTQ40N50L2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
170 mΩ
Polarity
N-Channel
Power Dissipation
540 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
40A
Rise Time
133 ns
Input Capacitance (Ciss)
10400pF @25V(Vds)
Fall Time
44 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
540W (Tc)

IXTQ40N50L2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.8 mm
Size-Width
4.9 mm
Size-Height
20.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTQ40N50L2 Documents

IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
5 Pages / 0.18 MByte

IXTQ40N50 Documents

IXYS Semiconductor
TO-3P N-CH 500V 40A
IXYS Semiconductor
TO-3P N-CH 500V 40A
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