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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTQ460P2 Datasheet PDF
IXTQ460P2
$ 2.732
IXTQ460P2 Datasheet PDF (6 Pages)
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IXTQ460P2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Power Rating
480 W
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
270 mΩ
Power Dissipation
480 W
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Rise Time
9 ns
Input Capacitance (Ciss)
2890pF @25V(Vds)
Fall Time
5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
480W (Tc)

IXTQ460P2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTQ460P2 Documents

IXYS Semiconductor
6 Pages / 0.15 MByte

IXTQ460 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 24A 3Pin(3+Tab) TO-3P
Littelfuse
Power Field-Effect Transistor,
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