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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTQ52N30P Datasheet PDF
IXTQ52N30P
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IXTQ52N30P Datasheet PDF (6 Pages)
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IXTQ52N30P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
66 mΩ
Polarity
N-CH
Power Dissipation
400 W
Drain to Source Voltage (Vds)
300 V
Breakdown Voltage (Drain to Source)
300 V
Continuous Drain Current (Ids)
52A
Rise Time
22 ns
Input Capacitance (Ciss)
3490pF @25V(Vds)
Input Power (Max)
400 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
400W (Tc)

IXTQ52N30P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.8 mm
Size-Width
4.9 mm
Size-Height
20.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTQ52N30P Documents

IXYS Semiconductor
6 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXTQ52N30 Documents

IXYS Semiconductor
TO-3P N-CH 300V 52A
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