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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTQ69N30P Datasheet PDF
IXTQ69N30P
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IXTQ69N30P Datasheet PDF (5 Pages)
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IXTQ69N30P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Polarity
N-CH
Power Dissipation
500 W
Drain to Source Voltage (Vds)
300 V
Continuous Drain Current (Ids)
69A
Rise Time
25 ns
Input Capacitance (Ciss)
4960pF @25V(Vds)
Input Power (Max)
500 W
Fall Time
27 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500W (Tc)

IXTQ69N30P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTQ69N30P Documents

IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
5 Pages / 0.13 MByte

IXTQ69N30 Documents

IXYS Semiconductor
TO-3P N-CH 300V 69A
IXYS Semiconductor
TO-3P N-CH 300V 25A
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