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IXTQ75N10P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-3-3

Description:

TO-3P N-CH 100V 75A

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Documentation:

IXTQ75N10P Datasheet (1 Pages)

IXTQ75N10P Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-3-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

21 mΩ

Polarity

N-CH

Power Dissipation

360 W

Threshold Voltage

5.5 V

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Continuous Drain Current (Ids)

75A

Rise Time

53 ns

Input Capacitance (Ciss)

2250pF @25V(Vds)

Fall Time

45 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

360W (Tc)

View Datasheet >

IXTQ75N10P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

15.8 mm

Size-Width

4.9 mm

Size-Height

20.3 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

View Datasheet >

IXTQ75N10P Environmental

IXTQ75N10P Function Overview

IXTQ75N10P Documents

IXTQ75N10P Datasheet

IXYS Semiconductor

1 Pages / 0.08 MByte

IXTQ75N10P Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.24 MByte

IXTQ75N10 Documents

IXTQ75N10P Datasheet PDF

IXYS Semiconductor

TO-3P N-CH 100V 75A

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