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IXTQ82N25P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-3-3

Description:

TO-3P N-CH 250V 82A

Pictures:

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Product Pictures

Documentation:

IXTQ82N25P Datasheet (5 Pages)

IXTQ82N25P Datasheet PDF (5 Pages)

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IXTQ82N25P Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-3-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

35 mΩ

Polarity

N-CH

Power Dissipation

500 W

Drain to Source Voltage (Vds)

250 V

Breakdown Voltage (Drain to Source)

250 V

Continuous Drain Current (Ids)

82A

Rise Time

20 ns

Input Capacitance (Ciss)

4800pF @25V(Vds)

Input Power (Max)

500 W

Fall Time

22 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

500W (Tc)

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IXTQ82N25P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

15.8 mm

Size-Width

4.9 mm

Size-Height

20.3 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTQ82N25P Environmental

IXTQ82N25P Function Overview

IXTQ82N25P Documents

IXTQ82N25P Datasheet

IXYS Semiconductor

5 Pages / 0.14 MByte

IXTQ82N25P Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.28 MByte

IXTQ82N25 Documents

IXTQ82N25P Datasheet PDF

IXYS Semiconductor

TO-3P N-CH 250V 82A

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