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IXTQ96N20P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-3-3

Description:

N-Channel 200V 96A 24mOhm Through Hole Power MOSFET - TO-3P

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Documentation:

IXTQ96N20P Datasheet (5 Pages)

IXTQ96N20P Datasheet PDF (5 Pages)

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IXTQ96N20P Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-3-3

Power Dissipation

600 W

Drain to Source Voltage (Vds)

200 V

Rise Time

30 ns

Input Capacitance (Ciss)

4800pF @25V(Vds)

Input Power (Max)

600 W

Fall Time

30 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

600W (Tc)

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IXTQ96N20P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXTQ96N20P Environmental

IXTQ96N20P Function Overview

IXTQ96N20P Documents

IXTQ96N20P Datasheet

IXYS Semiconductor

5 Pages / 0.19 MByte

IXTQ96N20 Documents

IXTQ96N20P Datasheet PDF

IXYS Semiconductor

N-Channel 200V 96A 24mOhm Through Hole Power MOSFET - TO-3P

IXTQ96N20P Datasheet PDF

Littelfuse

Power Field-Effect Transistor, 96A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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