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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTT10P60 Datasheet PDF
IXTT10P60
$ 1.77
IXTT10P60 Datasheet PDF (4 Pages)
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IXTT10P60 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Polarity
P-CH
Power Dissipation
300W (Tc)
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
10A
Rise Time
27 ns
Input Capacitance (Ciss)
4700pF @25V(Vds)
Fall Time
35 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXTT10P60 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTT10P60 Documents

IXYS Semiconductor
4 Pages / 0.15 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

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