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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTT12N150 Datasheet PDF
IXTT12N150
$ 10.19
IXTT12N150 Datasheet PDF (4 Pages)
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IXTT12N150 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Polarity
N-CH
Power Dissipation
890 W
Drain to Source Voltage (Vds)
1500 V
Continuous Drain Current (Ids)
12A
Rise Time
16 ns
Input Capacitance (Ciss)
3720pF @25V(Vds)
Input Power (Max)
890 W
Fall Time
14 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
890W (Tc)

IXTT12N150 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
14 mm
Size-Width
16.05 mm
Size-Height
5.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTT12N150 Documents

IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
4 Pages / 0.11 MByte

IXTT12 Documents

IXYS Semiconductor
Trans MOSFET N-CH 150V 120A 3Pin(2+Tab) TO-268
IXYS Semiconductor
TO-268AA N-CH 1500V 12A
IXYS Semiconductor
Mosfet n-Ch 1.5kV 12A To268
IXYS Semiconductor
TO-268AA N-CH 1400V 12A
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