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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTT16N20D2 Datasheet PDF
IXTT16N20D2
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IXTT16N20D2 Datasheet PDF (5 Pages)
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IXTT16N20D2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-268-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
73 mΩ
Polarity
N-CH
Power Dissipation
695 W
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
16A
Rise Time
130 ns
Input Capacitance (Ciss)
5500pF @25V(Vds)
Fall Time
135 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
695W (Tc)

IXTT16N20D2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTT16N20D2 Documents

IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
6 Pages / 0.16 MByte

IXTT16N20 Documents

IXYS Semiconductor
TO-268 N-CH 200V 16A
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