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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTT20P50P Datasheet PDF
IXTT20P50P
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IXTT20P50P Datasheet PDF (5 Pages)
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IXTT20P50P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
450 mΩ
Polarity
P-CH
Power Dissipation
460 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
20A
Rise Time
32 ns
Input Capacitance (Ciss)
5120pF @25V(Vds)
Fall Time
34 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
460W (Tc)

IXTT20P50P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
14 mm
Size-Width
16.05 mm
Size-Height
5.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTT20P50P Documents

IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.21 MByte

IXTT20P50 Documents

IXYS Semiconductor
TO-268P-CH 500V 20A
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