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IXTT30N60P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-268-3

Description:

Trans MOSFET N-CH 600V 30A 3Pin(2+Tab) TO-268

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Documentation:

IXTT30N60P Datasheet (6 Pages)

Package Outline Dimension on5 Page 6 Page

IXTT30N60P Datasheet PDF (6 Pages)

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IXTT30N60P Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

30.0 A

Case/Package

TO-268-3

Power Dissipation

540W (Tc)

Input Capacitance

5.05 nF

Gate Charge

82.0 nC

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

30.0 A

Input Capacitance (Ciss)

5050pF @25V(Vds)

Power Dissipation (Max)

540W (Tc)

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IXTT30N60P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTT30N60P Environmental

IXTT30N60P Function Overview

IXTT30N60P Documents

IXTT30N60P Datasheet

IXYS Semiconductor

6 Pages / 0.34 MByte

IXTT30N60 Documents

IXTT30N60L2 Datasheet PDF

IXYS Semiconductor

TO-268 N-CH 600V 30A

IXTT30N60P Datasheet PDF

IXYS Semiconductor

Trans MOSFET N-CH 600V 30A 3Pin(2+Tab) TO-268

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