$ 10.545

IXTT60N10 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-268-3

Description:

Trans MOSFET N-CH 100V 80A 3Pin(2+Tab) TO-268

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IXTT60N10 Datasheet PDF (2 Pages)

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IXTT60N10 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-268-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

20 mΩ

Power Dissipation

300 W

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Rise Time

20 ns

Input Capacitance (Ciss)

3200pF @25V(Vds)

Fall Time

18 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

300W (Tc)

IXTT60N10 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tube

Size-Length

16.05 mm

Size-Width

14 mm

Size-Height

5.1 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

IXTT60N10 Environmental

IXTT60N10 Function Overview

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IXTT60N10 Other Datasheet PDF

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2 Pages / 0.5 MByte

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IXTT60N10 Datasheet PDF

IXYS Semiconductor

Trans MOSFET N-CH 100V 80A 3Pin(2+Tab) TO-268

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