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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTT6N120 Datasheet PDF
IXTT6N120
$ 8.379
IXTT6N120 Datasheet PDF (4 Pages)
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IXTT6N120 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
2.6 Ω
Polarity
N-CH
Power Dissipation
300 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
1200 V
Breakdown Voltage (Drain to Source)
1200 V
Continuous Drain Current (Ids)
6A
Rise Time
33 ns
Input Capacitance (Ciss)
1950pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
18 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXTT6N120 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
14 mm
Size-Width
16.05 mm
Size-Height
5.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTT6N120 Documents

IXYS Semiconductor
4 Pages / 0.57 MByte

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