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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTY01N100 Datasheet PDF
IXTY01N100
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IXTY01N100 Datasheet PDF (5 Pages)
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IXTY01N100 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
80 Ω
Polarity
N-CH
Power Dissipation
25 W
Drain to Source Voltage (Vds)
1000 V
Breakdown Voltage (Drain to Source)
1000 V
Continuous Drain Current (Ids)
0.1A
Rise Time
12 ns
Input Capacitance (Ciss)
54pF @25V(Vds)
Input Power (Max)
25 W
Fall Time
28 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
25W (Tc)

IXTY01N100 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTY01N100 Documents

IXYS Semiconductor
5 Pages / 0.07 MByte
IXYS Semiconductor
6 Pages / 0.16 MByte

IXTY01 Documents

IXYS Semiconductor
MOSFET MOSFET N-CH DEPLETN 1000V 100mA TO-25
IXYS Semiconductor
TO-252AA N-CH 1000V 0.1A
IXYS Semiconductor
TO-252AA N-CH 800V 0.1A
Littelfuse
Power Field-Effect Transistor,
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