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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTY08N100D2 Datasheet PDF
IXTY08N100D2
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IXTY08N100D2 Datasheet PDF (6 Pages)
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IXTY08N100D2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
21 Ω
Polarity
N-CH
Power Dissipation
60 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
1000 V
Breakdown Voltage (Drain to Source)
1000 V
Continuous Drain Current (Ids)
0.8A
Rise Time
57 ns
Input Capacitance (Ciss)
325pF @25V(Vds)
Input Power (Max)
60 W
Fall Time
48 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
60W (Tc)

IXTY08N100D2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTY08N100D2 Documents

IXYS Semiconductor
6 Pages / 0.17 MByte
IXYS Semiconductor
6 Pages / 0.26 MByte

IXTY08N100 Documents

IXYS Semiconductor
TO-252AA N-CH 1000V 0.8A
IXYS Semiconductor
DPAK N-CH 1000V 0.8A
Littelfuse
Power Field-Effect Transistor,
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