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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTY1R6N100D2 Datasheet PDF
IXTY1R6N100D2
$ 1.481
IXTY1R6N100D2 Datasheet PDF (5 Pages)
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IXTY1R6N100D2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
10 Ω
Power Dissipation
100 W
Drain to Source Voltage (Vds)
1000 V
Breakdown Voltage (Drain to Source)
1000 V
Rise Time
65 ns
Input Capacitance (Ciss)
645pF @25V(Vds)
Fall Time
41 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
100W (Tc)

IXTY1R6N100D2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.22 mm
Size-Width
6.73 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTY1R6N100D2 Documents

IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
6 Pages / 0.16 MByte

IXTY1R6N100 Documents

IXYS Semiconductor
Trans MOSFET N-CH 1kV 1.6A 3Pin(2+Tab) TO-252AA
IXYS Semiconductor
IXTY1R6N100D2 Series 1000V 1.6A 10Ω N-Ch Depletion Mode MOSFET - TO-252-3
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