$ 41.41

IXUN350N10 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

SOT-227B N-CH 100V 350A

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IXUN350N10 Datasheet PDF (5 Pages)

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IXUN350N10 Specifications

TYPE

DESCRIPTION

Case/Package

SOT-227-4

Polarity

N-CH

Power Dissipation

830W (Tc)

Drain to Source Voltage (Vds)

100 V

Continuous Drain Current (Ids)

350A

Input Capacitance (Ciss)

27000pF @25V(Vds)

Power Dissipation (Max)

830W (Tc)

IXUN350N10 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Operating Temperature

-55℃ ~ 150℃ (TJ)

IXUN350N10 Environmental

IXUN350N10 Function Overview

IXUN350N10 Documents

IXUN350N10 Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.51 MByte

IXUN350 Documents

IXUN350N10 Datasheet PDF

IXYS Semiconductor

SOT-227B N-CH 100V 350A

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